sst421nl/423nl vishay siliconix document number: 72060 s-40391?rev. b, 15-mar-04 www.vishay.com 1 monolithic n-channel jfet duals product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) v gs1 ? v gs2 max (mv) sst421nl ? 0.4 to ? 2 ? 40 0.3 10 SST423NL ? 0.4 to ? 2 ? 40 0.3 25 features benefits applications anti latchup capability monolithic design high slew rate low offset/drift voltage low gate leakage: 0.6 pa low noise high cmrr: 102 db external substrate bias?avoids latchup tight differential match vs. current improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signals ultralow input current differential amps high-speed comparators impedance converters description the sst421nl/423nl are monolithic dual n-channel jfets designed to provide very high input impedance for differential amplification and impedance matching. among its many unique features, this series offers low operating gate current. pins 4 and 8 on sst421nl/423nl part numbers enable the substrate to be connected to a positive polarity, external bias (v dd ) to avoid latchup. the so-8 package provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. the so-8 package is available with tape-and-reel options for compatibility with automatic assembly methods. similar versions of these part numbers are available in the hermetically sealed to-78 package. full military processing is available. see data sheets for part numbers u421/423. s 1 substrate d 1 g 2 g 1 d 2 substrate s 2 narrow body soic 5 6 7 8 2 3 4 1 top view marking codes: sst421nl ? (421nl) SST423NL ? (423nl) absolute maximum ratings gate-drain, gate-source voltage ? 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-gate voltage 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . storage temperature ? 65 to 200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction t emperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : per side a 300 mw . . . . . . . . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.4 mw/ c above 25 c b. derate 4 mw/ c above 25 c
sst421nl/423nl vishay siliconix www.vishay.com 2 document number: 72060 s-40391?rev. b, 15-mar-04 specifications (t a = 25 c unless otherwise noted) limits sst421nl SST423NL parameter symbol specific test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a, v ds = 0 v ? 60 ? 40 ? 40 gate-gate breakdown voltage v (br)g1 ? g2 i g = 1 a, i d = 0, i s = 0 55 40 40 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1.2 ? 0.4 ? 2 ? 0.4 ? 2 saturation drain current i dss v ds = 10 v, v gs = 0 v 400 60 1000 60 1000 a gate reverse current i gss v gs = ? 20 v, v ds = 0 v ? 0.6 ? 50 ? 50 pa gate reverse current i gss t a = 125 c ? 0.3 ? 50 ? 50 na gate operating current i g v dg = 10 v i d = 30 a 10 pa gate operating current i g v dg = 10 v, i d = 30 a ? 1.0 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 10 a 2000 gate-source v oltage v gs v dg = 10 v, i d = 30 a ? 0.8 ? 1.8 ? 1.8 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 10 v v gs = 0 v f = 1 khz 0.6 0.3 1.5 0.3 1.5 ms common-source output conductance g os v ds = 10 v , v gs = 0 v , f = 1 kh z 4 10 10 s common-source forward transconductance g fs v ds = 10 v i d = 30 a f = 1 khz 0.2 0.12 0.35 0.12 0.35 ms common-source output conductance g os v ds = 10 v, i d = 30 a , f = 1 khz 0.4 3 3 s common-source input capacitance c iss 1.4 3 3 common-source reverse t ransfer capacitance c rss v ds = 10 v, v gs = 0 v, f = 1 mhz 0.7 1.5 1.5 pf equivalent input noise voltage e n v ds = 10 v, i d = 30 a , f = 10 hz 30 nv ? hz matching differential gate-source v oltage v gs1 ?v gs2 v dg = 10 v, i d = 30 a 10 25 mv gate-source v oltage differential change with temperature v gs1 ?v gs2 t v dg = 10 v, i d = 30 a t a = ? 55 to 125 c 10 40 v/ c common mode rejection ratio cmrr v dg = 10 to 20 v, i d = 30 a 102 90 80 db notes a. typical values are for design aid only, not guaranteed or subject to production testing. nnt
sst421nl/423nl vishay siliconix document number: 72060 s-40391?rev. b, 15-mar-04 www.vishay.com 3 typical characteristics (t a = 25 c unless otherwise noted) 030 20 10 40 50 drain current and transconductance vs. gate-source cutoff voltage gate leakage current output characteristics output characteristics v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss i gss @ 25 c t a = 125 c t a = 25 c i d = 100 a v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 0.1 v ? 0.3 v ? 0.5 v ? 0.7 v 100 a 1 0.8 0 0.6 0.4 0.2 2 0 1.6 1.2 0.8 0.4 0 ? 5 ? 1 ? 2 ? 3 ? 4 0.5 0 0.4 0.3 0.2 0.1 020 4 8 12 16 1 0 0.8 0.6 0.4 0.2 020 4 8 12 16 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 100 na i gss v gs(off) = ? 1 v v gs(off) = ? 1 v v gs(off) = ? 1.5 v output characteristics v ds ? drain-source voltage (v) 0.5 01 0.8 0.6 0.4 0.2 0.4 0.3 0.2 0 0.1 v gs(off) = ? 1.5 v v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.0 v output characteristics v ds ? drain-source voltage (v) 0.25 01 0.8 0.6 0.4 0.2 0.2 0.15 0.1 0 0.5 v gs(off ) = ? 1 v v gs = 0 v ? 0.1 v ? 0.2 v ? 0.3 v ? 0.4 v ? 0.5 v ? 0.6 v 30 a ? 0.7 v ? 1.0 v 30 a g fs ? forward transconductance (ms) i dss ? saturation drain current (ma) i g ? gate leakage i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
sst421nl/423nl vishay siliconix www.vishay.com 4 document number: 72060 s-40391?rev. b, 15-mar-04 typical characteristics (t a = 25 c unless otherwise noted) 100 1000 10 10 100 1000 130 120 80 110 100 90 10 100 1000 100 10 1 10 100 1000 100 10 1 transfer characteristics gate-source differential voltage vs. drain current voltage differential with temperature vs. drain current common mode rejection ratio vs. drain current cmrr (db) v gs ? gate-source voltage (v) i d ? drain current ( a) i d ? drain current ( a) i d ? drain current ( a) i d ? drain current ( a) t a = ? 55 c 125 c v gs(off) = ? 1 v u421 v dg = 10 v t a = 25 to 125 c t a = ? 55 to 25 c v dg = 10 v t a = 25 c 5 ? 10 v a v g fs r l 1 r l g os r l 10 v i d assume v dd = 15 v, v ds = 5 v ? 1.5 v circuit voltage gain vs. drain current 0.5 0 0.4 0.3 0.2 0.1 0 ? 1 ? 0.2 ? 0.4 ? 0.6 ? 0.8 100 0 80 60 40 20 u423 u421 u423 on-resistance vs. drain current i d ? drain current (ma) 0.01 0.1 1 5 4 3 2 1 0 v gs(off) = ? 1 v ? 1.5 v v gs(off) = ? 1 v v ds = 10 v 25 c v dg = 10 ? 20 v v/ c () t v gs1 v gs2 ? (mv) v gs1 v gs2 ? v gs1 v gs2 ? v dg cmrr = 20 log r ds(on) ? drain-source on-resistance ( ? ) i d ? drain current (ma) a v ? voltage gain
sst421nl/423nl vishay siliconix document number: 72060 s-40391?rev. b, 15-mar-04 www.vishay.com 5 typical characteristics (t a = 25 c unless otherwise noted) 10 100 1 k 100 k 10 k v gs ? gate-source voltage (v) common-source input capacitance vs. gate-source voltage ? input capacitance (pf) c iss v ds = 0 v 5 v 10 v f = 1 mhz 2 0 1.6 1.2 0.8 0.4 0 ? 20 ? 4 ? 8 ? 12 ? 16 common-source reverse feedback capacitance vs. gate-source voltage ? reverse feedback capacitance (pf) c rss v gs ? gate-source voltage (v) v ds = 0 v 5 v 10 v f = 1 mhz 1 0 0.8 0.6 0.4 0.2 0 ? 20 ? 4 ? 8 ? 12 ? 16 output conductance vs. drain current i d ? drain current ( a) v gs(off) = ? 1 v t a = ? 55 c 125 c 10 100 1000 1 0 0.8 0.6 0.4 0.2 equivalent input noise voltage vs. frequency f ? frequency (hz) v ds = 10 v i d = 30 a i d = 100 a 50 0 40 30 20 10 10 100 1000 common-source forward transconductance vs. drain current i d ? drain current ( a) t a = ? 55 c 125 c 1 0 0.8 0.6 0.4 0.2 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = 10 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds g os 20 16 0 12 8 4 5 0 4 3 2 1 0 ? 5 ? 1 ? 2 ? 3 ? 4 v ds = 10 v f = 1 khz v gs(off) = ? 1 v v ds = 10 v f = 1 khz 25 c 25 c s) g os ? output conductance ( e n ? noise voltage nv / hz g os ? output conductance ( s) r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms)
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